Numerical Model of Gate-All-Around MOSFET With Vacuum Gate Dielectric for Biomolecule Detection

Author

Gautam, Rajni ; Saxena, Manoj ; Gupta, R.S. ; Gupta, Mridula

Author_Institution

Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India

Volume

33

Issue

12

fYear

2012

Firstpage

1756

Lastpage

1758

Abstract

In this letter, a dielectric-modulated GAA MOSFET with vacuum gate dielectric is proposed for enhanced sensitivity for label-free detection of neutral and charged biomolecules. We developed an analytical model to model the response of GAA MOSFET in the presence of biomolecules. The model is verified with simulation results of ATLAS-3-D. Results indicate that GAA MOSFET biosensor with vacuum gate dielectric is able to serve as a highly sensitive low-power label-free biosensor along with advantages of robustness, reliability, and CMOS compatibility.

Keywords

CMOS integrated circuits; MOSFET; bioelectric phenomena; biosensors; dielectric materials; molecular biophysics; ATLAS-3-D; CMOS compatibility; GAA MOSFET biosensor; biomolecule detection; charged biomolecule label-free detection; dielectric-modulated GAA MOSFET; gate-all-around MOSFET; low-power label-free biosensor; neutral biomolecule label-free detection; numerical model; vacuum gate dielectric; Biosensors; Dielectrics; MOSFET circuits; Molecular electronics; Numerical models; Sensitivity; ATLAS-3-D; biosensor; dielectric-modulated field-effect transistor (FET) (DMFET); gate-all-around (GAA) MOSFET; vacuum gate dielectric;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2216247

Filename

6307816