• DocumentCode
    1287774
  • Title

    Low-Loss Multiple-Slot Waveguides Fabricated by Optical Lithography and Atomic Layer Deposition

  • Author

    Karvonen, Lasse ; Säynätjoki, Antti ; Chen, Ya ; Tu, Xiaoguang ; Liow, Tsung-Yang ; Hiltunen, Jussi ; Hiltunen, Marianne ; Lo, Guo-Qiang ; Honkanen, Seppo

  • Author_Institution
    Sch. of Electr. Eng., Aalto Univ., Aalto, Finland
  • Volume
    24
  • Issue
    22
  • fYear
    2012
  • Firstpage
    2074
  • Lastpage
    2076
  • Abstract
    We demonstrate silicon-based multiple-slot waveguides filled with dual atomic layer deposited oxide layers. Slot modes for both polarizations, transverse electric (TE) and transverse magnetic (TM), are supported in the waveguide. Propagation loss in the order of 8 dB/cm is achieved for the TE-polarization and 4 dB/cm for the TM-polarization in the waveguides with dual (Al2O3-TiO2) thin film layers. The devices are fabricated using low-temperature complementary metal-oxide-semiconductor compatible processes. To our knowledge, this is the first demonstration of dual-filled slot waveguides.
  • Keywords
    CMOS integrated circuits; aluminium compounds; atomic layer deposition; integrated optoelectronics; light polarisation; light propagation; optical fabrication; optical films; optical losses; optical waveguides; photolithography; silicon-on-insulator; thin films; titanium compounds; Al2O3-TiO2; Si; TE polarizations; TM polarizations; dual atomic layer deposited oxide layers; dual thin film layers; dual-filled slot waveguides; low-loss multiple-slot waveguides; low-temperature complementary metal-oxide-semiconductor compatible processes; optical lithography; propagation loss; slot modes; transverse electric polarizations; transverse magnetic polarizations; Lithography; Optical waveguides; Optimized production technology; Propagation losses; Rails; Silicon; Atomic layer deposition (ALD); integrated optics; slot waveguide;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2012.2219856
  • Filename
    6307817