Title :
Terahertz imaging with bow-tie InGaAs-based diode with broken symmetry
Author :
Kasalynas, I. ; Seliuta, Dalius ; Simniskis, R. ; Tamosiunas, V. ; Kohler, Klaus ; Valusis, G.
Author_Institution :
Semicond. Phys. Inst., Vilnius, Lithuania
Abstract :
A silicon-lens coupled bow-tie InGaAs-based diode with broken symmetry is demonstrated for terahertz imaging applications below 1 THz at room temperature. Transient features and the dynamic range of the bow-tie InGaAs-based sensor are explored experimentally, proving the possibility to use the device in real-time imaging systems. Response time is found to be less than 7 ns, responsivity of 0.1 mA/W, and noise equivalent power of 5.8 nW/radicHz.
Keywords :
III-V semiconductors; indium compounds; semiconductor diodes; submillimetre wave imaging; terahertz wave imaging; InGaAs; bow-tie InGaAs-based diode; broken symmetry; terahertz imaging;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.0336
