DocumentCode
1287796
Title
Variation of Relative Intensity Noise With Optical Power in InGaAsP Semiconductor Optical Amplifier
Author
Yamada, Minoru ; Takeuchi, Nobuhito ; Sakumoto, Kyohei ; Kuwamura, Yuji
Author_Institution
Div. of Electr. Eng. & Comput. Sci., Kanazawa Univ., Kanazawa, Japan
Volume
24
Issue
22
fYear
2012
Firstpage
2049
Lastpage
2051
Abstract
Relative intensity noise (RIN) is an index to evaluate the amount of noise compared to the optical intensity, which is widely believed to be increased by optical amplification. A previous paper, however, pointed out that theoretically the RIN of the output light of a semiconductor optical amplifier can be reduced from that of the input light, and that the RIN level is determined by the output optical power almost independently from the RIN level of the input light. Detailed experimental data to support these postulations are given in this letter.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser noise; semiconductor optical amplifiers; InGaAsP; RIN level; optical amplification; optical intensity; output optical power; relative intensity noise; semiconductor optical amplifier; Noise; Optical attenuators; Optical noise; Optical saturation; Semiconductor optical amplifiers; Stimulated emission; Optical noise; relative intensity noise (RIN); semiconductor optical amplifier;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2012.2219302
Filename
6307820
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