• DocumentCode
    1287796
  • Title

    Variation of Relative Intensity Noise With Optical Power in InGaAsP Semiconductor Optical Amplifier

  • Author

    Yamada, Minoru ; Takeuchi, Nobuhito ; Sakumoto, Kyohei ; Kuwamura, Yuji

  • Author_Institution
    Div. of Electr. Eng. & Comput. Sci., Kanazawa Univ., Kanazawa, Japan
  • Volume
    24
  • Issue
    22
  • fYear
    2012
  • Firstpage
    2049
  • Lastpage
    2051
  • Abstract
    Relative intensity noise (RIN) is an index to evaluate the amount of noise compared to the optical intensity, which is widely believed to be increased by optical amplification. A previous paper, however, pointed out that theoretically the RIN of the output light of a semiconductor optical amplifier can be reduced from that of the input light, and that the RIN level is determined by the output optical power almost independently from the RIN level of the input light. Detailed experimental data to support these postulations are given in this letter.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser noise; semiconductor optical amplifiers; InGaAsP; RIN level; optical amplification; optical intensity; output optical power; relative intensity noise; semiconductor optical amplifier; Noise; Optical attenuators; Optical noise; Optical saturation; Semiconductor optical amplifiers; Stimulated emission; Optical noise; relative intensity noise (RIN); semiconductor optical amplifier;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2012.2219302
  • Filename
    6307820