Title :
Advanced simulation of CBRAM devices with the level set method
Author :
Dorion, P. ; Cueto, O. ; Reyboz, M. ; Barbe, J.C. ; Grigoriu, A. ; Maday, Y.
Author_Institution :
CEA-LETI MINATEC, Univ. Grenoble Alpes, Grenoble, France
Abstract :
A TCAD model for Chalcogenide based CBRAM is presented. This model starts from an existing model and uses an advanced level set method to follow the growth of the filament in the electrolyte. We couple the level set method with equations which model the cations migration and the electric field in the electrolyte and in the filament. We take into account silver clusters in the electrolyte in order to study their influence on switching time.
Keywords :
electrolytes; random-access storage; semiconductor device models; technology CAD (electronics); TCAD model; cation migration; chalcogenide based CBRAM; conductive-bridge random-access memory; electrolyte; level set method; Electrodes; Equations; Level set; Mathematical model; Numerical models; Silver; Switches;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
Print_ISBN :
978-1-4799-5287-8
DOI :
10.1109/SISPAD.2014.6931556
