Development of an electro-thermal resistive switching model based on O-Frenkel pairs to study reset and set mechanisms in HfO2-based RRAM cells

Author

Cueto, O. ; Payet, Anthony ; Cabout, Thomas

Author_Institution

Univ. Grenoble Alpes, Grenoble, France

fYear

2014

fDate

9-11 Sept. 2014

Firstpage

45

Lastpage

48

Abstract

An electro-thermal resistive switching model based on O-Frenkel pairs is presented. This model relies on partial differential equations and is used to simulate reset and set mechanisms for HfO₂-based RRAM devices starting from an existing conductive filament. First simulations indicate that the model can fairly reproduce experimental ON and OFF resistances.

Keywords

hafnium compounds; integrated circuit modelling; partial differential equations; random-access storage; HfO₂; O-Frenkel pairs; ON-OFF resistance; conductive filament; electrothermal resistive switching model; hafnium dioxide-based RRAM cells; partial differential equation; reset mechanism; set mechanism; Conductivity; Hafnium compounds; Ions; Mathematical model; Numerical models; Semiconductor device modeling; Switches; O-Frenkel pairs; oxide based RRAM simulation; switching model;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on

Conference_Location

Yokohama

ISSN

1946-1569

Print_ISBN

978-1-4799-5287-8

Type

conf

DOI

10.1109/SISPAD.2014.6931559

Filename

6931559