Title :
Development of an electro-thermal resistive switching model based on O-Frenkel pairs to study reset and set mechanisms in HfO2-based RRAM cells
Author :
Cueto, O. ; Payet, Anthony ; Cabout, Thomas
Author_Institution :
Univ. Grenoble Alpes, Grenoble, France
Abstract :
An electro-thermal resistive switching model based on O-Frenkel pairs is presented. This model relies on partial differential equations and is used to simulate reset and set mechanisms for HfO2-based RRAM devices starting from an existing conductive filament. First simulations indicate that the model can fairly reproduce experimental ON and OFF resistances.
Keywords :
hafnium compounds; integrated circuit modelling; partial differential equations; random-access storage; HfO2; O-Frenkel pairs; ON-OFF resistance; conductive filament; electrothermal resistive switching model; hafnium dioxide-based RRAM cells; partial differential equation; reset mechanism; set mechanism; Conductivity; Hafnium compounds; Ions; Mathematical model; Numerical models; Semiconductor device modeling; Switches; O-Frenkel pairs; oxide based RRAM simulation; switching model;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
Print_ISBN :
978-1-4799-5287-8
DOI :
10.1109/SISPAD.2014.6931559
