• DocumentCode
    1288095
  • Title

    CW second-order complex coupled DFB lasers with low threshold current density and high monomode stability

  • Author

    Rodadey, J. ; Gourgon, C. ; Gaud, E. ; Martin, Daniel ; Reinhart, F.K.

  • Author_Institution
    Dept. of Phys., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
  • Volume
    35
  • Issue
    24
  • fYear
    1999
  • fDate
    11/25/1999 12:00:00 AM
  • Firstpage
    2119
  • Lastpage
    2120
  • Abstract
    High quality second-order complex coupled distributed feedback lasers have been fabricated. The gain coupling is caused by the vertical radiation. The InGaAs/GaAs/AlGaAs as-cleaved lasers are 500 μm long and operate CW at room temperature at 980 nm. The average threshold current density is 300 A/cm2. The sidemode suppression ratios are as high as 47 dB
  • Keywords
    III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; laser stability; quantum well lasers; 980 nm; CW second-order complex coupled DFB laser; InGaAs-GaAs-AlGaAs; InGaAs/GaAs/AlGaAs quantum well laser; distributed feedback laser; fabrication; gain coupling; monomode stability; sidemode suppression ratio; threshold current density; vertical radiation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991404
  • Filename
    815931
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1288095