Title :
Heterogeneous integration of visible AlGaInP and infrared AlInGaAs lasers with GaN-based light sources
Author :
Floyd, P.D. ; Treat, D.W. ; Bour, D.P.
Author_Institution :
Electron. Mater. Lab., Xerox Palo Alto Res. Center, CA, USA
fDate :
11/25/1999 12:00:00 AM
Abstract :
Arrays of integrated red, infrared and blue light emitters fabricated using wafer fusion of GaAs-based laser structures to GaN-based light-emitting diode (LED) heterostructures are demonstrated. Successful operation of red and infrared lasers fused to functioning GaN LEDs has been achieved. Infrared, AlGaInAs QW lasers (4×500 μm) operating with a threshold current (Ith) of 40 mA and external differential quantum efficiency (nd) of 11.5%/facet at ~821 nm are shown. Red, GaInP QW lasers (4×500 μm) operating with an Ith of 118 mA and ηd of 18.7/facet at ~660 nm are also shown. The adjacent InGaN/GaN LED emits at 446 nm
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; integrated optics; light emitting diodes; quantum well lasers; semiconductor laser arrays; 11.5 percent; 118 mA; 18.7 percent; 40 mA; 446 nm; 660 nm; 821 nm; AlGaInP; AlInGaAs; GaN light emitting diode heterostructure; InGaN-GaN; array; blue light emitter; external differential quantum efficiency; heterogeneous integration; infrared AlInGaAs QW laser; infrared light emitter; red light emitter; threshold current; visible AlGaInP QW laser; wafer fusion;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991456
