A novel duality-based modeling methodology for reverse current-voltage characteristics of SiC

This paper presents a novel methodology to design a compact but precise SPICE (Simulation Program with Integrated Circuit Emphasis) model which reproduces complete current-voltage (I-V) characteristics of Silicon Carbide (SiC) power devices. The methodology is based on duality relation between one function for the forward I-V characteristics and its inverse function for the reverse I-V characteristics. The simulated and the measured results of static characteristics of DioMOS (Diode integrated SiC MOSFET) have proved that the reverse I-V characteristics are reproduced by the inverse function of the forward I-V characteristics. Moreover, universal applicability of the proposed methodology is proved by other commercially supplied SiC power devices as well.