Title :
Impact of nonlinear drain resistance in bias-stressed InAlAs/InGaAs HEMTs
Author :
Suemitsu, T. ; Yokoyama, H. ; Ishii, Y.
Author_Institution :
NTT Photonics Labs., Kanagawa, Japan
fDate :
11/25/1999 12:00:00 AM
Abstract :
A study of the degradation of drain current under bias and temperature stress is presented for InP-based InAlAs/InGaAs HEMTs. Nonlinear drain resistance has been found to play an important role in the degradation. The decrease in the drain current is caused by the rapid increase in the drain resistance. The result suggests that the carrier density, which is originally sufficient to keep the resistance low and linear, decreases in the drain ohmic region
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; high electron mobility transistors; indium compounds; InAlAs-InGaAs; InAlAs/InGaAs HEMT; InP; bias stress; carrier density; drain current degradation; nonlinear drain resistance; temperature stress;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991433
