DocumentCode
1288201
Title
Impact of nonlinear drain resistance in bias-stressed InAlAs/InGaAs HEMTs
Author
Suemitsu, T. ; Yokoyama, H. ; Ishii, Y.
Author_Institution
NTT Photonics Labs., Kanagawa, Japan
Volume
35
Issue
24
fYear
1999
fDate
11/25/1999 12:00:00 AM
Firstpage
2141
Lastpage
2143
Abstract
A study of the degradation of drain current under bias and temperature stress is presented for InP-based InAlAs/InGaAs HEMTs. Nonlinear drain resistance has been found to play an important role in the degradation. The decrease in the drain current is caused by the rapid increase in the drain resistance. The result suggests that the carrier density, which is originally sufficient to keep the resistance low and linear, decreases in the drain ohmic region
Keywords
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; high electron mobility transistors; indium compounds; InAlAs-InGaAs; InAlAs/InGaAs HEMT; InP; bias stress; carrier density; drain current degradation; nonlinear drain resistance; temperature stress;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19991433
Filename
815946
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