• DocumentCode
    1288215
  • Title

    Low interface state density AlN/GaN MISFETs

  • Author

    Alekseev, E. ; Eisenbach, A. ; Pavlidis, D.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    35
  • Issue
    24
  • fYear
    1999
  • fDate
    11/25/1999 12:00:00 AM
  • Firstpage
    2145
  • Lastpage
    2146
  • Abstract
    III-V nitride-based MISFETs have been fabricated on AlN/GaN heterostructures grown by MOVPE. C-V characterisation of these MIS structures revealed a minimum value of the interface state density Dit≃1011 cm-2 eV-1. AlN/GaN MISFETs with 2 μm long gates demonstrated a high peak transconductance of gm≃135 mS/mm, which exceeded previously reported results
  • Keywords
    MISFET; 2 micron; AlN-GaN; C-V characterisation; III-V semiconductors; MISFETs; MOVPE; gate length; interface state density; peak transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991407
  • Filename
    815948
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1288215