Title :
Low interface state density AlN/GaN MISFETs
Author :
Alekseev, E. ; Eisenbach, A. ; Pavlidis, D.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
11/25/1999 12:00:00 AM
Abstract :
III-V nitride-based MISFETs have been fabricated on AlN/GaN heterostructures grown by MOVPE. C-V characterisation of these MIS structures revealed a minimum value of the interface state density Dit≃1011 cm-2 eV-1. AlN/GaN MISFETs with 2 μm long gates demonstrated a high peak transconductance of gm≃135 mS/mm, which exceeded previously reported results
Keywords :
MISFET; 2 micron; AlN-GaN; C-V characterisation; III-V semiconductors; MISFETs; MOVPE; gate length; interface state density; peak transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991407
