• DocumentCode
    1288222
  • Title

    SiGe micro-cooler

  • Author

    Zeng, Gehong ; Shakouri, A. ; Bounty, C.L. ; Robinson, G. ; Croke, E. ; Abraham, Pierre ; Fan, Xiaofeng, II ; Reese, H. ; Bowers, J.E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • Volume
    35
  • Issue
    24
  • fYear
    1999
  • fDate
    11/25/1999 12:00:00 AM
  • Firstpage
    2146
  • Lastpage
    2147
  • Abstract
    Thin film SiGe heterostructure coolers have been fabricated and characterised. Cooling by as much as 1.1 K at room temperature and 1.6 K at a substrate temperature of 70°C over a 3 μm Si/SiGe superlattice barrier has been measured. This corresponds to cooling power densities of hundreds of watts per square centimetre
  • Keywords
    thermoelectric devices; 3 micron; 70 degC; Si-SiGe; cooling power densities; semiconductor lasers; substrate temperature; superlattice barrier; thermoelectric coolers; thin film heterostructure coolers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991435
  • Filename
    815949