DocumentCode :
1288222
Title :
SiGe micro-cooler
Author :
Zeng, Gehong ; Shakouri, A. ; Bounty, C.L. ; Robinson, G. ; Croke, E. ; Abraham, Pierre ; Fan, Xiaofeng, II ; Reese, H. ; Bowers, J.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume :
35
Issue :
24
fYear :
1999
fDate :
11/25/1999 12:00:00 AM
Firstpage :
2146
Lastpage :
2147
Abstract :
Thin film SiGe heterostructure coolers have been fabricated and characterised. Cooling by as much as 1.1 K at room temperature and 1.6 K at a substrate temperature of 70°C over a 3 μm Si/SiGe superlattice barrier has been measured. This corresponds to cooling power densities of hundreds of watts per square centimetre
Keywords :
thermoelectric devices; 3 micron; 70 degC; Si-SiGe; cooling power densities; semiconductor lasers; substrate temperature; superlattice barrier; thermoelectric coolers; thin film heterostructure coolers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19991435
Filename :
815949
Link To Document :
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