DocumentCode :
128832
Title :
The Wigner Monte Carlo method for accurate semiconductor device simulation
Author :
Ellinghaus, P. ; Nedjalkov, M. ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear :
2014
fDate :
9-11 Sept. 2014
Firstpage :
113
Lastpage :
116
Abstract :
The Wigner equation can conveniently describe quantum transport problems in terms of particles evolving in the phase space. Improvements in the particle generation scheme of the Wigner Monte Carlo method are shown, which increase the accuracy of simulations as validated by comparison to exact solutions of the Schrödinger equation. Simulations with a time-varying potential are demonstrated and issues which arise in devices with an externally applied voltage between the contacts are treated, thereby further advancing the Wigner Monte Carlo method for the simulation of semiconductor devices.
Keywords :
Monte Carlo methods; Schrodinger equation; Wigner distribution; semiconductor device models; Schrödinger equation; Wigner Monte Carlo method; Wigner equation; exact solutions; externally applied voltage; particle generation scheme; phase space; quantum transport problems; semiconductor device simulation; time-varying potential; Coherence; Equations; Mathematical model; Monte Carlo methods; Nanoscale devices; Numerical models; Semiconductor devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
ISSN :
1946-1569
Print_ISBN :
978-1-4799-5287-8
Type :
conf
DOI :
10.1109/SISPAD.2014.6931576
Filename :
6931576
Link To Document :
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