Simulation of light-illuminated STM measurements

Author

Fukuda, Kenji ; Nishizawa, Masayasu ; Tada, Tetsuya ; Bolotov, Leonid ; Suzuki, Kenji ; Sato, Seiki ; Arimoto, Hideo ; Kanayama, Toshihiko

Author_Institution

Nanoelectron. Res. Inst. (NERI), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

fYear

2014

fDate

9-11 Sept. 2014

Firstpage

129

Lastpage

132

Abstract

A three dimensional simulation system for light-illuminated STM measurements is proposed for the first time combining semiconductor process and device simulators with an FDTD solver. Photo-generation rates estimated from light intensity obtained from the FDTD solver are incorporated into a semiconductor device simulation of a device structure including a semiconductor sample and an STM probe tip. Tunneling currents between the STM probe and the sample are solved consistently with current continuity equations in the semiconductor sample. The usefulness of the proposed method is demonstrated through a case of UV-laser-illuminated STM measurement of a silicon nanowire.

Keywords

finite difference time-domain analysis; nanowires; scanning tunnelling microscopy; semiconductor device models; tunnelling; FDTD solver; STM probe tip; UV-laser-illuminated STM measurement; current continuity equations; device simulators; device structure; light intensity; light-illuminated STM measurements; photogeneration rates; semiconductor device simulation; semiconductor process; semiconductor sample; silicon nanowire; three dimensional simulation system; tunneling currents; Current measurement; Finite difference methods; Probes; Semiconductor device measurement; Semiconductor process modeling; Time-domain analysis; Tunneling; finite-difference time-domain FDTD; light-illuminated STM; scanning tunneling microscopy STM; semiconductor device simulation; tunneling currents;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on

Conference_Location

Yokohama

ISSN

1946-1569

Print_ISBN

978-1-4799-5287-8

Type

conf

DOI

10.1109/SISPAD.2014.6931580

Filename

6931580