• DocumentCode
    128855
  • Title

    Physical modeling of time dependent dielectric breakdown (TDDB) of BEOL oxide using Monte Carlo particle simulation

  • Author

    Seongwook Choi ; Young June Park

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
  • fYear
    2014
  • fDate
    9-11 Sept. 2014
  • Firstpage
    157
  • Lastpage
    160
  • Abstract
    A simulation method for the TDDB of the BEOL oxide is investigated based on the 3D particle Monte Carlo simulation model which can evaluate the random motion of Cu ions in the oxide. While the conventional models do not consider the percolation theory of the TDDB phenomenon, the new model is based on the percolation model so that more rigorous physics can be considered. Also, the new method enables the statistical analysis of TDDB for the BEOL oxide. From the simulation study, it turns out that the assumptions of the previous models result in inaccurate characteristics and mechanisms. We expect that the simulation framework proposed in this paper could not only lead us to deeper physical insights but also could be readily applied to predict the reliability under the realistic conditions of the interconnect such as the 3D damascene structures or Cu-liner systems and so on.
  • Keywords
    Monte Carlo methods; copper; interconnections; percolation; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; statistical analysis; 3D damascene structures; 3D particle Monte Carlo simulation model; BEOL oxide; Cu; TDDB physical modeling; back-end-of-line; copper-liner systems; percolation model; random motion evaluation; reliability prediction; statistical analysis; time dependent dielectric breakdown; Electric breakdown; Mathematical model; Monte Carlo methods; Reliability; Semiconductor process modeling; Solid modeling; Three-dimensional displays; Back-End-Of-Line (BEOL) oxide; Interconnect; Monte Carlo simulation; Percolation theory; Time Dependent Dielectric Breakdown (TDDB);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
  • Conference_Location
    Yokohama
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4799-5287-8
  • Type

    conf

  • DOI
    10.1109/SISPAD.2014.6931587
  • Filename
    6931587