On Estimating and Canceling Parasitic Capacitance in Submillimeter-Wave Planar Schottky Diodes

Author

Xu, Haiyong ; Schoenthal, Gerhard S. ; Liu, Lei ; Xiao, Qun ; Hesler, Jeffrey L. ; Weikle, Robert M., II

Author_Institution

Sch. of Eng. & Appl. Sci., Univ. of Virginia, Charlottesville, VA, USA

Volume

19

Issue

12

fYear

2009

Firstpage

807

Lastpage

809

Abstract

The equivalent circuit model of a submillimeter planar diode is investigated. In particular, the parasitic finger to pad capacitance that shunts the diode junction severely degrades the performance of frequency multiplier. Therefore, precise estimation of its value is crucial to circuit design in the submillimeter wave range. In this letter, a parallel diode structure is analyzed, and symmetry is utilized to remove parasitic elements external to the finger loop. This analytical approach is verified through measurement on a 200 GHz planar diode circuit. To increase the diode junction capacitance modulation ratio, one possible solution is also suggested.

Keywords

Schottky diodes; capacitance; equivalent circuits; frequency multipliers; integrated circuit design; integrated circuit modelling; submillimetre wave diodes; circuit design; diode junction capacitance modulation ratio; equivalent circuit model; frequency 200 GHz; frequency multiplier; pad capacitance; parallel diode structure; parasitic capacitance; parasitic finger; planar diode circuit; submillimeter-wave planar Schottky diode; Anodes; Capacitors; Equivalent circuits; Fingers; Frequency; Gallium arsenide; Parasitic capacitance; Schottky diodes; Submillimeter wave circuits; Submillimeter wave technology; Frequency multiplication; parasitic capacitance; planar Schottky diodes; submillimeter wave diodes;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2009.2033518

Filename

5320197