DocumentCode
1288724
Title
15 GHz High-Isolation Sub-Harmonic Mixer With Delay Compensation
Author
Syu, Jin-Siang ; Meng, Chinchun
Author_Institution
Dept. of Electr. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
19
Issue
12
fYear
2009
Firstpage
810
Lastpage
812
Abstract
A 15-GHz high-isolation sub-harmonic mixer (SHM) with delay compensation is demonstrated in this letter using 0.35 mum SiGe heterojunction bipolar transistor (HBT) technology. The proposed SHM consisting of two parallel stacked-LO mixer cores with opposite LO I/Q inputs substantially improves port-to-port isolation. A mathematical analysis regarding the isolation properties is also included in this letter. Further, a conventional stacked-LO SHM (w/o compensation) is also implemented with the same device sizes and bias conditions for a fair comparison. SHMs w/ and w/o compensation have similar conversion gain of 9/10 dB and noise figure of 14/13.5 dB when fLO = 7.5 GHz. However, the delay compensation technique improves the 2LO-RF/IF isolation by 34/35 dB, the LO-RF/IF isolation by 8/9 dB, and the RF-IF isolation by 22 dB.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; mixers (circuits); HBT technology; Si-Ge; SiGe heterojunction bipolar transistor; delay compensation; frequency 15 GHz; frequency 7.5 GHz; size 0.35 micron; subharmonic mixer; Delay; Electron mobility; Filters; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; PHEMTs; Silicon germanium; Topology; Heterojunction bipolar transistor (HBT); Marchand balun; SiGe; polyphase filter; sub-harmonic mixer (SHM);
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2009.2033522
Filename
5320198
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