• DocumentCode
    1288724
  • Title

    15 GHz High-Isolation Sub-Harmonic Mixer With Delay Compensation

  • Author

    Syu, Jin-Siang ; Meng, Chinchun

  • Author_Institution
    Dept. of Electr. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    19
  • Issue
    12
  • fYear
    2009
  • Firstpage
    810
  • Lastpage
    812
  • Abstract
    A 15-GHz high-isolation sub-harmonic mixer (SHM) with delay compensation is demonstrated in this letter using 0.35 mum SiGe heterojunction bipolar transistor (HBT) technology. The proposed SHM consisting of two parallel stacked-LO mixer cores with opposite LO I/Q inputs substantially improves port-to-port isolation. A mathematical analysis regarding the isolation properties is also included in this letter. Further, a conventional stacked-LO SHM (w/o compensation) is also implemented with the same device sizes and bias conditions for a fair comparison. SHMs w/ and w/o compensation have similar conversion gain of 9/10 dB and noise figure of 14/13.5 dB when fLO = 7.5 GHz. However, the delay compensation technique improves the 2LO-RF/IF isolation by 34/35 dB, the LO-RF/IF isolation by 8/9 dB, and the RF-IF isolation by 22 dB.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; mixers (circuits); HBT technology; Si-Ge; SiGe heterojunction bipolar transistor; delay compensation; frequency 15 GHz; frequency 7.5 GHz; size 0.35 micron; subharmonic mixer; Delay; Electron mobility; Filters; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; PHEMTs; Silicon germanium; Topology; Heterojunction bipolar transistor (HBT); Marchand balun; SiGe; polyphase filter; sub-harmonic mixer (SHM);
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2009.2033522
  • Filename
    5320198