Feasibility exploration of NVM based I-cache through MSHR enhancements

SRAM based memory systems are plagued by a number of problems like sub-threshold leakage and susceptibility to read/write failure with dynamic voltage scaling schemes or low supply voltage. Non-Volatile Memory (NVM) technologies are being explored extensively nowadays to replace the conventional SRAM memories even for level 1 (L1) caches. These NVMs like Spin Torque Transfer RAM (STT-MRAM), Resistive-RAM (ReRAM) and Phase Change RAM (PRAM) are less hindered by leakage problems with technology scaling and consume lesser area. However, simple replacement of SRAM by NVMs is not a viable option due to their write related issues. The main focus of this paper is the exploration of write delay and write energy issues in a NVM based L1 Instruction cache (I-cache) for an ARM like single core system. We propose a NVM I-cache and extend its MSHR (Miss Status Handling Register) functionality to address the NVMs write related issues. According to our simulations, appropriate tuning of selective architecture parameters can reduce the performance penalty introduced by the NVM (~45%) to extremely tolerable levels (~1%) and show energy gains up to 35%. Furthermore, on configuring our modified NVM based system to occupy area comparable to the original SRAM-based configuration, it outperforms the SRAM baseline and leads to even more energy savings.