Optimization of Si MOS transistors for THz detection using TCAD simulation

Author

Jain, R. ; Rucker, Holger ; Mohapatra, Nihar R.

Author_Institution

IHP, Frankfurt (Oder), Germany

fYear

2014

fDate

9-11 Sept. 2014

Firstpage

213

Lastpage

216

Abstract

We present a TCAD simulation study for Silicon MOSFET terahertz detectors. The impact of transistor doping profile optimization on detector performance is analyzed. Time-domain simulations are used to extract the DC response to THz excitations and to explore the impact of different device parasitics. It is shown that the DC response can be improved by (1) minimizing the source-side parasitic resistance (2) maximizing the drain-side parasitic resistance and (3) minimizing the drain-to-body and channel-to-body capacitances.

Keywords

MOSFET; doping profiles; elemental semiconductors; semiconductor counters; semiconductor doping; silicon; technology CAD (electronics); terahertz wave detectors; time-domain analysis; DC response; Si; TCAD simulation; THz detection; THz excitations; channel-to-body capacitances; device parasitics; drain-side parasitic resistance; drain-to-body minimization; silicon MOS transistor optimization; silicon MOSFET terahertz detectors; source-side parasitic resistance; time-domain simulations; transistor doping profile optimization; Detectors; Doping; Integrated circuit modeling; Logic gates; Mathematical model; Semiconductor process modeling; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on

Conference_Location

Yokohama

ISSN

1946-1569

Print_ISBN

978-1-4799-5287-8

Type

conf

DOI

10.1109/SISPAD.2014.6931601

Filename

6931601