One-dimensional analytical modeling of the VDMOS transistor taking into account the thermoelectrical interactions

Author

Lallement, Christophe ; BOUCHAKOUR, Rachid ; Maurel, Thierry

Author_Institution

Dept. of Electr. Eng., Swiss Federal Inst. of Technol., Lausanne, Switzerland

Volume

44

Issue

2

fYear

1997

fDate

2/1/1997 12:00:00 AM

Firstpage

103

Lastpage

111

Abstract

An analytical one-dimensional thermoelectrical model for the power MOSFET transistor (VDMOS transistor) has been developed and implemented in the Saber circuit simulator. The device temperature becomes an interactive variable during the simulation. The model results in the combination of the electrical model of the device with a thermal network which models the different material layers crossed by the heat flow from the silicon chip to the heatsink (conduction phenomenon), and also takes into account the radiation and convection phenomena. The accuracy of the model is evaluated with electrical and thermal characterizations, and with a validation circuit

Keywords

power MOSFET; semiconductor device models; Saber circuit simulator; VDMOS transistor; analytical one-dimensional thermoelectrical model; conduction; convection; heat flow; power MOSFET; radiation; Analytical models; Circuit simulation; Conducting materials; MOSFET circuits; Power MOSFET; Resistance heating; Silicon; Temperature; Thermal conductivity; Thermoelectricity;

fLanguage

English

Journal_Title

Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on

Publisher

ieee

ISSN

1057-7122

Type

jour

DOI

10.1109/81.554324

Filename

554324