DocumentCode
128893
Title
Modelinig and algorithms of device simulation for ultra-high speed devices
Author
Mutoh, Hideki
Author_Institution
Link Res. Corp. Odawara, Odawara, Japan
fYear
2014
fDate
9-11 Sept. 2014
Firstpage
225
Lastpage
228
Abstract
The physical models and algorithms of device simulation for ultra-high speed devices are proposed. The propagation of electromagnetic field induced by electrodes cannot be ignored for analyses of ultra-high speed devices. In order to obtain the consistent basic equations for the both of device and electromagnetic field propagation simulations, we newly introduce Nakanishi-Lautrup (NL) field of quantum electrodynamics (QED) to the electromagnetic field model. The models and algorithms are reported with some calculation results.
Keywords
electromagnetic fields; quantum electrodynamics; semiconductor device models; very high speed integrated circuits; Nakanishi-Lautrup field; QED; device simulation; electromagnetic field model; electromagnetic field propagation; quantum electrodynamics; ultrahigh speed devices; Electric potential; Electrodes; Electromagnetic fields; Equations; Logic gates; Mathematical model; Substrates; Nakanishi-Lautrup field; carrier generation; device simulation; field propagation; ultra-high speed;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location
Yokohama
ISSN
1946-1569
Print_ISBN
978-1-4799-5287-8
Type
conf
DOI
10.1109/SISPAD.2014.6931604
Filename
6931604
Link To Document