• DocumentCode
    128893
  • Title

    Modelinig and algorithms of device simulation for ultra-high speed devices

  • Author

    Mutoh, Hideki

  • Author_Institution
    Link Res. Corp. Odawara, Odawara, Japan
  • fYear
    2014
  • fDate
    9-11 Sept. 2014
  • Firstpage
    225
  • Lastpage
    228
  • Abstract
    The physical models and algorithms of device simulation for ultra-high speed devices are proposed. The propagation of electromagnetic field induced by electrodes cannot be ignored for analyses of ultra-high speed devices. In order to obtain the consistent basic equations for the both of device and electromagnetic field propagation simulations, we newly introduce Nakanishi-Lautrup (NL) field of quantum electrodynamics (QED) to the electromagnetic field model. The models and algorithms are reported with some calculation results.
  • Keywords
    electromagnetic fields; quantum electrodynamics; semiconductor device models; very high speed integrated circuits; Nakanishi-Lautrup field; QED; device simulation; electromagnetic field model; electromagnetic field propagation; quantum electrodynamics; ultrahigh speed devices; Electric potential; Electrodes; Electromagnetic fields; Equations; Logic gates; Mathematical model; Substrates; Nakanishi-Lautrup field; carrier generation; device simulation; field propagation; ultra-high speed;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
  • Conference_Location
    Yokohama
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4799-5287-8
  • Type

    conf

  • DOI
    10.1109/SISPAD.2014.6931604
  • Filename
    6931604