Ultrafast, dual-depletion region, InGaAs/InP p-i-n detector

Author

Effenberger, Frank J. ; Joshi, Abhay M.

Author_Institution

Discovery Semicond. Inc., Cranbury, NJ, USA

Volume

14

Issue

8

fYear

1996

fDate

8/1/1996 12:00:00 AM

Firstpage

1859

Lastpage

1864

Abstract

The design of a new kind of photodetector, the dual-depletion region p-i-n photodetector, is presented. This vertical detector has a parasitic capacitance and transit time that can be controlled semi-independently. This eases the classical tradeoff between these two speed limiting factors, allowing the design of large, fast detectors. A theoretical analysis of the transit time effect and the capacitance effect is made. This analysis is then used to compute optimum design parameters

Keywords

III-V semiconductors; capacitance; gallium arsenide; high-speed optical techniques; indium compounds; optical design techniques; optimisation; p-i-n photodiodes; photodetectors; InGaAs-InP; InGaAs/InP p-i-n detector; capacitance effect; dual-depletion region; fast detectors; optimum design parameters; parasitic capacitance; photodetector design; speed limiting factors; transit time; transit time effect; vertical detector; Absorption; Capacitance; Charge carrier processes; Detectors; Electrodes; Indium gallium arsenide; Indium phosphide; Optical pulse shaping; PIN photodiodes; Resonance;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.532024

Filename

532024