Numerical small-signal AC modeling of deep-level-trap related frequency-dependent output conductance and capacitance for GaAs MESFET´s on semi-insulating substrates

Author

Li, Qinming ; Dutton, Robert W.

Author_Institution

Dept. of Electr. Eng., Stanford Univ., CA, USA

Volume

38

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1285

Lastpage

1288

Abstract

A two-dimensional numerical deep-level-trap (DLT) model suitable for small-signal AC analysis is described. The model reproduces the experimentally observed frequency-dependent output conductance for a GaAs MESFET on a semi-insulating substrate, clarifies the relations between the frequency characteristics and trap parameters, and identifies two trap levels with proper energy separation supported by DLTS measurement. The model also predicts some frequency-dependent output capacitance contributed by the two trap levels

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; 2D model; DLTS measurement; GaAs; MESFET; deep level trap model; frequency characteristics; frequency-dependent output capacitance; frequency-dependent output conductance; numerical modeling; semi-insulating substrates; semiconductors; small-signal AC analysis; small-signal AC modeling; trap parameters; two trap levels; Capacitance; Electron traps; Energy measurement; Equations; Frequency response; Gallium arsenide; Insulation; MESFETs; Numerical models; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.81618

Filename

81618