Title :
Monolithically integrated InP-based front-end photoreceivers
Author :
Zebda, Yousef ; Lai, Richard ; Bhattachary, Pallab ; Pavlidis, Dimitris ; Berger, Paul R. ; Brock, Timothy L.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
6/1/1991 12:00:00 AM
Abstract :
The performance characteristics of a monolithically integrated front-end photoreceiver, consisting of a photodiode and a MODFET amplifier, were analyzed and measured. A vertical scheme of integration was initially used to realize a photoreceiver circuit on InP consisting of an InGaAs p-i-n diode, an InGaAs/InAlAs pseudomorphic MODFET, and passive circuit elements. The device structures were grown by single-step molecular beam epitaxy with an isolating layer in between. The microwave performance of 1-μm-gate MODFETs in the circuit is characterized by fT=9 GHz, although identical discrete devices have fT=30-35 GHz. The degradation is due to additional parasitic capacitances present in this integration scheme. In spite of this disadvantage the bandwidth of the circuit is 2.1 GHz. Integration of the p-i-n diode with 1.0- and 0.25-μm-gate MODFETs has also been done in a planar scheme using regrowth, and receiver bandwidths of 6.5 GHz were measured. This value is comparable to that of hybrid circuits with InP-based devices
Keywords :
III-V semiconductors; aluminium compounds; amplifiers; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; optical communication equipment; p-i-n diodes; photodiodes; receivers; substrates; 0.25 micron; 1 micron; 2.1 GHz; 6.5 GHz; 9 GHz; InGaAs-InAlAs; InP substrate; MODFET amplifier; bandwidth; front-end photoreceivers; isolating layer; microwave performance; molecular beam epitaxy; monolithically integrated; p-i-n diode; parasitic capacitances; passive circuit elements; performance characteristics; photodiode; photoreceiver circuit; planar scheme; pseudomorphic MODFET; semiconductors; vertical scheme of integration; Bandwidth; HEMTs; Indium gallium arsenide; Indium phosphide; Integrated circuit measurements; MODFET circuits; MODFET integrated circuits; P-i-n diodes; Performance analysis; Photodiodes;
Journal_Title :
Electron Devices, IEEE Transactions on
