Large-scale 3D TCAD study of the impact of shorts in phase controlled thyristors

Continuous advances in computer hardware and solving algorithm enable more pervasive use of 3D TCAD simulations for both nanoscale and power semiconductor devices. However, while BiMOS power semiconductor devices such as IGBTs require relatively small 3D simulated structures (of the order of fa 10×10×1000/im³), bipolar power devices such as thyristors require much larger simulated structures of the order of fa 10 mm³. This work presents large scale 3D simulations of Phase Controlled Thyristors and describes the technique used to reduce computation times to extents compatible with industrial practice. 3D TCAD is used to understand the impact of cathode shorts on figures of merit such as the breakdown voltage and dV/dt.