DocumentCode :
128926
Title :
Simultaneous simulation of systematic and stochastic process variations
Author :
Lorenz, Juergen ; Bar, Eberhard ; Burenkov, Alex ; Evanschitzky, P. ; Asenov, Asen ; Wang, Lingfeng ; Wang, Xiongfei ; Brown, A.R. ; Millar, C. ; Reid, Dave
Author_Institution :
Fraunhofer Inst. for Integrated Syst. & Device Technol. (IISB), Erlangen, Germany
fYear :
2014
fDate :
9-11 Sept. 2014
Firstpage :
289
Lastpage :
292
Abstract :
An efficient approach is presented and demonstrated which enables the simultaneous simulation of the impact of several sources of process variations, ranging from equipment-induced to stochastic ones, which are caused by the granularity of matter. Own software is combined with third-party tools to establish a hierarchical simulation sequence from equipment to circuit level. Correlations which occur because some sources of variability affect different devices and different device quantities can be rigorously studied.
Keywords :
circuit simulation; stochastic processes; circuit level; hierarchical simulation sequence; stochastic process variations; systematic process variations; third-party tools; Integrated circuit modeling; Lithography; Resource description framework; Semiconductor device modeling; Stochastic processes; Systematics; Transistors; LER; MGG; RDF; device simulation; equipment simulation; etching; lithography; process simulation; process variations; statistical variations; systematic variations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
ISSN :
1946-1569
Print_ISBN :
978-1-4799-5287-8
Type :
conf
DOI :
10.1109/SISPAD.2014.6931620
Filename :
6931620
Link To Document :
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