DocumentCode :
128936
Title :
Multigate transistors: Pushing Moore´s law to the limit
Author :
Colinge, J.-P.
Author_Institution :
TCAD Div., Taiwan Semicond. Manuf. Co. (TSMC), Hsinchu, Taiwan
fYear :
2014
fDate :
9-11 Sept. 2014
Firstpage :
313
Lastpage :
316
Abstract :
Improvements in electrostatic channel control allow FinFETs and trigate FETs to extend Moore´s law down to gate lengths of 15-20nm. Further scaling may require the better control that is provided by multigate devices. Using multigate FET architectures, gate length scaling down to 5 and 3 nm has been demonstrated experimentally and theoretically, respectively. At these dimensions, quantum confinement begins to appear and new effects such as drain current oscillations and tunneling through soft barriers can be observed. FET to SET and metal-semiconductor transitions resulting from quantum confinement present opportunities for new types of devices.
Keywords :
MOSFET; single electron transistors; tunnelling; FinFETs; Moore´s law; drain current oscillations; electrostatic channel control; gate lengths; metal-semiconductor transitions; multigate transistors; quantum confinement; size 15 nm to 20 nm; soft barrier tunneling; trigate FETs; Logic gates; MOSFET; Silicon; Temperature measurement; Voltage measurement; 1D confinement; FinFET; GAA transistor; multigate FET;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
ISSN :
1946-1569
Print_ISBN :
978-1-4799-5287-8
Type :
conf
DOI :
10.1109/SISPAD.2014.6931626
Filename :
6931626
Link To Document :
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