• DocumentCode
    128936
  • Title

    Multigate transistors: Pushing Moore´s law to the limit

  • Author

    Colinge, J.-P.

  • Author_Institution
    TCAD Div., Taiwan Semicond. Manuf. Co. (TSMC), Hsinchu, Taiwan
  • fYear
    2014
  • fDate
    9-11 Sept. 2014
  • Firstpage
    313
  • Lastpage
    316
  • Abstract
    Improvements in electrostatic channel control allow FinFETs and trigate FETs to extend Moore´s law down to gate lengths of 15-20nm. Further scaling may require the better control that is provided by multigate devices. Using multigate FET architectures, gate length scaling down to 5 and 3 nm has been demonstrated experimentally and theoretically, respectively. At these dimensions, quantum confinement begins to appear and new effects such as drain current oscillations and tunneling through soft barriers can be observed. FET to SET and metal-semiconductor transitions resulting from quantum confinement present opportunities for new types of devices.
  • Keywords
    MOSFET; single electron transistors; tunnelling; FinFETs; Moore´s law; drain current oscillations; electrostatic channel control; gate lengths; metal-semiconductor transitions; multigate transistors; quantum confinement; size 15 nm to 20 nm; soft barrier tunneling; trigate FETs; Logic gates; MOSFET; Silicon; Temperature measurement; Voltage measurement; 1D confinement; FinFET; GAA transistor; multigate FET;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
  • Conference_Location
    Yokohama
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4799-5287-8
  • Type

    conf

  • DOI
    10.1109/SISPAD.2014.6931626
  • Filename
    6931626