DocumentCode
128936
Title
Multigate transistors: Pushing Moore´s law to the limit
Author
Colinge, J.-P.
Author_Institution
TCAD Div., Taiwan Semicond. Manuf. Co. (TSMC), Hsinchu, Taiwan
fYear
2014
fDate
9-11 Sept. 2014
Firstpage
313
Lastpage
316
Abstract
Improvements in electrostatic channel control allow FinFETs and trigate FETs to extend Moore´s law down to gate lengths of 15-20nm. Further scaling may require the better control that is provided by multigate devices. Using multigate FET architectures, gate length scaling down to 5 and 3 nm has been demonstrated experimentally and theoretically, respectively. At these dimensions, quantum confinement begins to appear and new effects such as drain current oscillations and tunneling through soft barriers can be observed. FET to SET and metal-semiconductor transitions resulting from quantum confinement present opportunities for new types of devices.
Keywords
MOSFET; single electron transistors; tunnelling; FinFETs; Moore´s law; drain current oscillations; electrostatic channel control; gate lengths; metal-semiconductor transitions; multigate transistors; quantum confinement; size 15 nm to 20 nm; soft barrier tunneling; trigate FETs; Logic gates; MOSFET; Silicon; Temperature measurement; Voltage measurement; 1D confinement; FinFET; GAA transistor; multigate FET;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location
Yokohama
ISSN
1946-1569
Print_ISBN
978-1-4799-5287-8
Type
conf
DOI
10.1109/SISPAD.2014.6931626
Filename
6931626
Link To Document