Title :
MOSFET substrate current model for circuit simulation
Author :
Arora, Narain D. ; Sharma, Mahesh S.
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
fDate :
6/1/1991 12:00:00 AM
Abstract :
A simple, accurate MOSFET substrate current model suitable for a circuit simulator is presented. The effect of substrate bias on substrate current is modeled without introducing additional parameters. The accuracy of this model is demonstrated by its ability to fit the experimental data for both standard and LDD devices with average errors of less than 6%. The new model is compared with the substrate current models reported in the literature. In addition, the temperature dependence of the substrate current in the range of 0-120°C is also modeled. The new model has been implemented in a circuit-level hot-electron reliability simulator, and the results obtained from simulation of an inverter circuit are presented
Keywords :
circuit CAD; circuit analysis computing; insulated gate field effect transistors; semiconductor device models; 0 to 120 C; LDD devices; MOSFET substrate current model; circuit simulation; circuit-level hot-electron reliability simulator; inverter circuit; substrate bias; substrate current; temperature dependence; Circuit simulation; Degradation; Hot carriers; Intrusion detection; Inverters; MOSFET circuits; Predictive models; SPICE; Temperature dependence; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
