The design and optimization of high-performance, double-poly self-aligned p-n-p technology

The device design and performance of double-poly self-aligned p-n-p technology, featuring a low-resistivity p⁺ subcollector, thin p-epi, and boron-doped poly-emitter are described. Device isolation is provided by deep and shallow trenches which reduce the collector-to-substrate capacitance while maintaining a high breakdown voltage (⩾40 V). By utilizing a shallow emitter process in conjunction with an optimized arsenic-base implant, devices with emitter-base junction depths as shallow as 20 nm and base widths of less than 100 nm were obtained. Cutoff frequencies of up to 27 GHz were obtained, and the AC performance was demonstrated by an NTL-gate delay of 36 ps and an active-pull-down (APD) ECL-gate delay of 20 ps. This high-performance p-n-p technology was developed to be compatible with existing double-poly n-p-n technologies. The matching speed of p-n-p devices opens up new opportunities for high-performance complementary bipolar circuits