DocumentCode :
1289425
Title :
Theory of band-to-band tunneling under nonuniform electric fields for subbreakdown leakage currents
Author :
Takayanagi, Mariko ; Iwabuchi, Shuichi
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Volume :
38
Issue :
6
fYear :
1991
fDate :
6/1/1991 12:00:00 AM
Firstpage :
1425
Lastpage :
1431
Abstract :
A new expression for the band-to-band tunneling in the presence of a nonuniform electric field is derived, with emphasis on the importance of the exact evaluation of integrals over wave vectors of a tunneling electron. Nonuniformity of the electric field is taken into account in calculating the interband matrix element, although it is neglected in the electronic wave functions. Nonuniformity of the electric field tends to decrease the tunneling rate. The new expression shows a different electric field dependence from E.O. Kane´s (1959, 1961) tunneling rate especially in high electric fields. The appropriate evaluation of wave-vector integrations and the consideration of the spatial dependence of the electric field are indispensable to obtaining a correct electric-field dependence of the tunneling rate
Keywords :
insulated gate field effect transistors; leakage currents; semiconductor device models; tunnelling; MOSFETs; band-to-band tunneling; electric-field dependence; electronic wave functions; exact evaluation of integrals; high electric fields; interband matrix element; models; nonuniform electric fields; spatial dependence; subbreakdown leakage currents; tunneling electron; tunneling rate; wave-vector integrations; Breakdown voltage; Electric breakdown; Electrons; Erbium; Leakage current; Nonuniform electric fields; Random access memory; Silicon devices; Tunneling; Wave functions;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.81635
Filename :
81635
Link To Document :
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