Title :
Compact modeling of carrier trapping for accurate prediction of frequency dependent circuit operation
Author :
Oodate, Yuhei ; Tanimoto, Yuta ; Tanoue, Hiroshi ; Kikuchihara, Hideyuki ; Miyamoto, Hideaki ; Mattausch, Hans Jurgen ; Miura-Mattausch, M.
Author_Institution :
Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
Abstract :
We have investigated the influence of carrier traps on device characteristics in TFTs. In particular, our focus was given on transient characteristics influenced by carrier trapping during device operations. A compact model for circuit simulation of TFTs has been developed by considering the time constant of the trapping. The model was verified with measured frequency dependent TFT characteristics.
Keywords :
semiconductor device models; thin film transistors; carrier trapping; carrier traps; circuit simulation; device characteristics; device operations; frequency dependent TFT characteristics; frequency dependent circuit operation; thin film transistors; time constant; transient characteristics; Current measurement; Electron traps; Frequency measurement; Integrated circuit modeling; Thin film transistors; Transient analysis; TFTs; carrier traps; compact model; surface potential; transient charactersitics;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
Print_ISBN :
978-1-4799-5287-8
DOI :
10.1109/SISPAD.2014.6931630
