Title :
Thermal resistance measurements for AlGaAs/GaAs heterojunction bipolar transistors
Author :
Adlerstein, Michael G. ; Zaitlin, Mark P.
Author_Institution :
Raytheon Res. Div., Lexington, MA, USA
fDate :
6/1/1991 12:00:00 AM
Abstract :
A method for the measurement of the thermal resistance of heterojunction bipolar transistors (HBTs) has been developed. The measurement technique is described and its application is illustrated. Results for single-emitter HBTs are explained with the help of a model for HBT thermal resistance. Measured values agree with the predictions of the model for heat flow for single-emitter HBTs
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; thermal resistance measurement; HBTs; heterojunction bipolar transistors; measurement technique; model; semiconductors; Calibration; Electrical resistance measurement; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Measurement techniques; Ovens; Temperature; Thermal resistance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
