DocumentCode
1289561
Title
Thermal resistance measurements for AlGaAs/GaAs heterojunction bipolar transistors
Author
Adlerstein, Michael G. ; Zaitlin, Mark P.
Author_Institution
Raytheon Res. Div., Lexington, MA, USA
Volume
38
Issue
6
fYear
1991
fDate
6/1/1991 12:00:00 AM
Firstpage
1553
Lastpage
1554
Abstract
A method for the measurement of the thermal resistance of heterojunction bipolar transistors (HBTs) has been developed. The measurement technique is described and its application is illustrated. Results for single-emitter HBTs are explained with the help of a model for HBT thermal resistance. Measured values agree with the predictions of the model for heat flow for single-emitter HBTs
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; thermal resistance measurement; HBTs; heterojunction bipolar transistors; measurement technique; model; semiconductors; Calibration; Electrical resistance measurement; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Measurement techniques; Ovens; Temperature; Thermal resistance; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.81653
Filename
81653
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