DocumentCode
1289586
Title
Fabrication and characteristics of AlxGa1-xAs heterojunction phototransistors with wide-gap window
Author
Zhu, Yu ; Komatsu, Yoshihiko ; Noda, Susumu ; Takeda, Yoshikazu ; Sasaki, Akio
Author_Institution
Dept. of Electr. Eng., Kyoto Univ., Japan
Volume
38
Issue
6
fYear
1991
fDate
6/1/1991 12:00:00 AM
Firstpage
1310
Lastpage
1315
Abstract
The fabrication process and device characteristics of Al0.7 Ga0.3As/Al0.2Ga0.8As heterojunction phototransistors are described. The interface between the emitter and base layers becomes rough with the increase in the Al content of the emitter layer, and it causes a decrease in the optical conversion gain of the heterojunction phototransistors. A spacer layer with the same Al content as that in the emitter layer is inserted between the emitter and base layers. Both the interface morphology and the optical conversion gain are improved. Enhanced by the avalanche multiplication in the base-collector junction, an optical conversion gain of 1500 is achieved in spite of the shorter diffusion length in the Al0.2Ga0.8As base layer. The device exhibits a photoresponse in the range of 520-780 nm, i.e., from green to red light
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; phototransistors; semiconductor junctions; 520 to 780 nm; Al0.7Ga0.3As-Al0.2Ga0.8 As; AlxGa1-xAs; avalanche multiplication; base-collector junction; device characteristics; diffusion length; emitter layer; fabrication process; green to red light; heterojunction phototransistors; interface morphology; optical conversion gain; photoresponse; semiconductors; spacer layer; wide gap emitter; wide-gap window; Artificial intelligence; Gallium arsenide; Heterojunctions; Image intensifiers; Morphology; Optical device fabrication; Optical noise; Phototransistors; Stimulated emission; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.81656
Filename
81656
Link To Document