DocumentCode
1289622
Title
Three-terminal bistable switches in effective-mass superlattices
Author
Aishima, A. ; Fukushima, Yasuhiro
Author_Institution
Dept. of Electron. Eng., Hiroshima Univ.
Volume
24
Issue
1
fYear
1988
fDate
1/7/1988 12:00:00 AM
Firstpage
64
Lastpage
65
Abstract
Three-terminal bistable switching devices based on effective-mass superlattices are proposed and analysed. The essential feature of the device is the presence of negative resistance controlled by the small gate voltage. The threshold voltage of negative resistance is much lower and the current density is much higher than those in the resonant tunnelling diodes. Such properties are very desirable for achieving low-power ultrafast three-terminal bistable switches
Keywords
negative resistance effects; semiconductor device models; semiconductor superlattices; semiconductor switches; transistors; current density; effective-mass superlattices; fast switches; low-power ultrafast three-terminal bistable switches; negative resistance; operation; properties; quantum mechanical reflection effect; resonant tunnelling diodes; small gate voltage; threshold voltage of negative resistance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
8166
Link To Document