DocumentCode
129007
Title
A wear-leveling-aware dynamic stack for PCM memory in embedded systems
Author
Qingan Li ; Yanxiang He ; Yong Chen ; Xue, Chun Jason ; Nan Jiang ; Chao Xu
Author_Institution
Sch. of Comput. Sci., Wuhan Univ., Wuhan, China
fYear
2014
fDate
24-28 March 2014
Firstpage
1
Lastpage
4
Abstract
Phase Change Memory (PCM) is a promising DRAM replacement in embedded systems due to its attractive characteristics such as extremely low leakage power, high storage density and good scalability. However, PCM´s low endurance constrains its practical applications. In this paper, we propose a wear leveling aware dynamic stack to extend PCM´s lifetime when it is adopted in embedded systems as main memory. Through a dynamic stack, the memory space is circularly allocated to stack frames, and thus an even usage of PCM memory is achieved. The experimental results show that the proposed method can significantly reduce the write variation on PCM cells and enhance the lifetime of PCM memory.
Keywords
embedded systems; phase change memories; wear; DRAM replacement; PCM cells; PCM memory; embedded systems; low leakage power; memory space; phase change memory; storage density; wear-leveling-aware dynamic stack; Aerospace electronics; Dynamic scheduling; Embedded systems; Phase change materials; Random access memory; Resource management;
fLanguage
English
Publisher
ieee
Conference_Titel
Design, Automation and Test in Europe Conference and Exhibition (DATE), 2014
Conference_Location
Dresden
Type
conf
DOI
10.7873/DATE.2014.102
Filename
6800303
Link To Document