Title :
Ultralow-threshold cryogenic vertical-cavity surface-emitting laser
Author :
Zou, Z. ; Huffaker, D.L. ; Deppe, D.G.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
Data are presented characterizing a low-threshold vertical-cavity surface-emitting laser designed for cryogenic operation. A threshold current of 12 μA and current density of 25 A/cm2 are obtained at 77 K with the low-loss cavity design. From 77 K to 160 K, the threshold increases linearly with temperature, but only approximately tracks the detuning of the cavity resonance from the minimum energy transition of the quantum well. At 77 K, we estimate that the 25-A/cm2 threshold current density is about twice that required for transparency.
Keywords :
III-V semiconductors; aluminium compounds; cryogenic electronics; current density; gallium arsenide; laser cavity resonators; quantum well lasers; surface emitting lasers; 12 muA; 77 to 160 K; AlGaAs-GaAs; AlGaAs/GaAs ultralow-threshold cryogenic VCSEL; cavity resonance detuning; cryogenic operation; current density; low-loss cavity design; minimum energy transition; quantum well; threshold current; transparency; vertical-cavity surface-emitting laser; Cryogenics; Excitons; Laser transitions; Optical interconnections; Quantum dot lasers; Quantum well lasers; Semiconductor laser arrays; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE