Title :
1.58-μm lattice-matched and strained digital alloy AlGaInAs-InP multiple-quantum-well lasers
Author :
Liu, G.T. ; Stintz, A. ; Pease, E.A. ; Newell, T.C. ; Malloy, K.J. ; Lester, L.F.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
A versatile, digital-alloy molecular beam epitaxy (MBE) technique is employed to grow lattice-matched and strained AlGaInAs multiple-quantum well (MQW) 1.58-μm laser diodes on InP. A threshold current density as low as 510 A/cm2 has been demonstrated for broad area lasers with 1% strained AlGaInAs MQWs, which is the best MBE result in this material system. A single facet pulsed power as high as 0.56 W is obtained. It is also found that the efficiency and internal loss of digital alloy AlGaInAs QW devices are comparable to lasers grown by conventional MBE.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; gradient index optics; indium compounds; internal stresses; molecular beam epitaxial growth; optical losses; quantum well lasers; waveguide lasers; 0.56 W; 1.58 mum; AlGaInAs-InP; AlGaInAs-InP lattice-matched strained digital alloy MQW lasers; GRINSCH waveguide; InP; InP substrate; broad area lasers; digital-alloy molecular beam epitaxy technique; efficiency; internal loss; laser diodes; single facet pulsed power; strained AlGaInAs MQW; threshold current density; Digital alloys; Diode lasers; Indium phosphide; Molecular beam epitaxial growth; Optical materials; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
