Al-Doped Zinc Oxide Film Deposition in Function of Power by AC Bipolar Pulse in Reactive Magnetron Sputtering

Author

García-García, J. ; Pacheco-Sotelo, J. ; Valdivia-Barrientos, R. ; Rivera-Rodríguez, C. ; Pacheco-Pacheco, M. ; Gonzalez, Jean-Jacques ; Soria-Arguello, G. ; Nieto-Pérez, M.

Author_Institution

Inst. Tecnol. de Toluca, Metepec, Mexico

Volume

39

Issue

11

fYear

2011

Firstpage

2484

Lastpage

2485

Abstract

A reactive magnetron sputtering reactor powered by an ac bipolar pulse power source was used to grow aluminum-doped zinc oxide (ZnO:Al or AZO) on polypropylene films. The ac bipolar pulses and the electrode configuration assure a stable and arc-free material deposition at room temperature. The films were obtained in a reactive atmosphere of argon and oxygen at 1-Pa pressure and power ranges from 20 to 36 W. The surface of the AZO film was characterized using scanning electron microscopy.

Keywords

II-VI semiconductors; aluminium; electrochemical electrodes; plasma materials processing; scanning electron microscopy; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; Al-doped zinc oxide film deposition; ZnO:Al; ac bipolar pulse power source; arc-free material deposition; electrode configuration; polypropylene films; power 20 W to 36 W; pressure 1 Pa; reactive argon atmosphere; reactive magnetron sputtering; reactive oxygen atmosphere; scanning electron microscopy; temperature 293 K to 298 K; Inductors; Plasma temperature; Sputtering; Substrates; Zinc oxide; Plasma materials processing; sputtering;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/TPS.2011.2160368

Filename

5975248