Efficient continuous-wave lasing operation of a narrow-stripe oxide-confined GaInNAs-GaAs multiquantum-well laser grown by MOCVD

Author

Kai Yang ; Hains, C.P. ; Cheng, J.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

Volume

12

Issue

1

fYear

2000

Firstpage

7

Lastpage

9

Abstract

Efficient continuous-wave lasing operation has been achieved above room temperature by a triple-quantum-well GaInNAs-GaAs laser diode grown on a 6/spl deg/-misoriented GaAs substrate by MOCVD. Using a planar, oxide-confined, narrow-stripe (8 μm) laser geometry, continuous-wave lasing operation was achieved over a wide range of temperatures up to 57/spl deg/C. At room temperature, lasing occurs at a wavelength of 1.16 μm, with a high single-facet slope efficiency of 25% and a threshold current density of 1.3 kA/cm².

Keywords

III-V semiconductors; MOCVD; current density; gallium arsenide; indium compounds; quantum well lasers; semiconductor growth; 1.16 mum; 23 to 57 C; 25 percent; 8 mum; GaAs; GaInNAs-GaAs; GaInNAs-GaAs MQW laser; MOCVD; efficient continuous-wave lasing operation; high single-facet slope efficiency; misoriented GaAs substrate; narrow-stripe oxide-confinement; planar oxide-confined narrow-stripe laser geometry; room temperature; threshold current density; triple-quantum-well GaInNAs-GaAs laser diode; Chemical lasers; Diode lasers; Gallium arsenide; MOCVD; Quantum well lasers; Substrates; Surface emitting lasers; Temperature distribution; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.817429

Filename

817429