Title :
Efficient continuous-wave lasing operation of a narrow-stripe oxide-confined GaInNAs-GaAs multiquantum-well laser grown by MOCVD
Author :
Kai Yang ; Hains, C.P. ; Cheng, J.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
Efficient continuous-wave lasing operation has been achieved above room temperature by a triple-quantum-well GaInNAs-GaAs laser diode grown on a 6/spl deg/-misoriented GaAs substrate by MOCVD. Using a planar, oxide-confined, narrow-stripe (8 μm) laser geometry, continuous-wave lasing operation was achieved over a wide range of temperatures up to 57/spl deg/C. At room temperature, lasing occurs at a wavelength of 1.16 μm, with a high single-facet slope efficiency of 25% and a threshold current density of 1.3 kA/cm2.
Keywords :
III-V semiconductors; MOCVD; current density; gallium arsenide; indium compounds; quantum well lasers; semiconductor growth; 1.16 mum; 23 to 57 C; 25 percent; 8 mum; GaAs; GaInNAs-GaAs; GaInNAs-GaAs MQW laser; MOCVD; efficient continuous-wave lasing operation; high single-facet slope efficiency; misoriented GaAs substrate; narrow-stripe oxide-confinement; planar oxide-confined narrow-stripe laser geometry; room temperature; threshold current density; triple-quantum-well GaInNAs-GaAs laser diode; Chemical lasers; Diode lasers; Gallium arsenide; MOCVD; Quantum well lasers; Substrates; Surface emitting lasers; Temperature distribution; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
