Impact of ultrashallow junction on hot carrier degradation of sub-0.25-μm nMOSFETs

Author

Nakamura, Kaori ; Murakami, Eiichi ; Kimura, Shin´ichiro

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

21

Issue

1

fYear

2000

Firstpage

27

Lastpage

29

Abstract

We have investigated the hot carrier (HC) reliability of nMOSFETs with an ultrashallow source/drain (S/D) extension, and found that lightly doped drain (LDD)-type HC degradation is accelerated. The lifetime strongly depends on the extension implantation dose or the implantation angle. A reduced overlap region between the gate electrode and drain diffusion seemed to exaggerate the LDD-type HC degradation. Angled implantation at over 10/spl deg/ effectively suppressed the degradation.

Keywords

MOSFET; hot carriers; ion implantation; semiconductor device reliability; semiconductor device testing; 0.2 mum; angled ion implantation; drain diffusion; extension implantation dose; gate electrode; hot carrier reliability; implantation angle; lightly doped drain-type hot carrier degradation; nMOSFET; overlap region; punchthrough stopper implantation dose; ultrashallow junction; ultrashallow source/drain extension; Acceleration; Degradation; Electrodes; Fabrication; Hot carriers; Impact ionization; Ion implantation; MOSFET circuits; Stress; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.817442

Filename

817442