Title :
205-GHz (Al,In)N/GaN HEMTs
Author :
Sun, Haifeng ; Alt, Andreas R. ; Benedickter, Hansruedi ; Feltin, Eric ; Carlin, Jean-François ; Gonschorek, Marcus ; Grandjean, Nicolas ; Bolognesi, C.R.
Author_Institution :
Millimeter-Wave Electron. Group, ETH Zurich, Zürich, Switzerland
Abstract :
We report 55-nm gate AlInN/GaN high-electron-mobility transistors (HEMTs) featuring a short-circuit current gain cutoff frequency of fT = 205 GHz at room temperature, a new record for GaN-based HEMTs. The devices source a maximum current density of 2.3 A/mm at VGS = 0 V and show a measured transconductance of 575 mS/mm, which is the highest value reported to date for nonrecessed gate nitride HEMTs. Comparison to state-of-the-art thin-barrier AlGaN/GaN HEMTs suggests that AlInN/GaN devices benefit from an advantageous channel velocity under high-field transport conditions.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; wide band gap semiconductors; AlInN-GaN; HEMT; advantageous channel velocity; frequency 205 GHz; high electron mobility transistors; high field transport condition; maximum current density; short circuit current gain cutoff frequency; size 55 nm; temperature 293 K to 298 K; Aluminum gallium nitride; Current density; Current measurement; Cutoff frequency; Density measurement; Gallium nitride; HEMTs; Logic gates; MODFETs; Temperature; Transconductance; AlInN/GaN; high-electron-mobility transistor (HEMT); millimeter-wave transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2055826
