Title :
Charge Gain, NBTI, and Random Telegraph Noise in EEPROM Flash Memory Devices
Author :
Janai, Meir ; Bloom, Ilan
Author_Institution :
Saifun Semicond., Ltd., Netanya, Israel
Abstract :
Different charge-gain (CG) processes are reported in EEPROM nonvolatile Flash memory devices. The process originally characterized in nitride-trapping devices is reexamined. Its mechanism is reinterpreted in terms of the recovery of negative-bias temperature instability (NBTI). We show that this CG process is controlled by nonequilibrium random-telegraph-noise-like mechanism, similar to NBTI recovery in MOS devices.
Keywords :
MIS devices; flash memories; random noise; random-access storage; CG process; EEPROM nonvolatile flash memory devices; MOS devices; NBTI recovery; charge gain; negative-bias temperature instability; nitride-trapping devices; nonequilibrium random-telegraph-noise; Character generation; Charge carrier processes; EPROM; Flash memory; MOS devices; Niobium compounds; Noise; Nonvolatile memory; Process control; Telegraphy; Temperature; Temperature measurement; Titanium compounds; Tunneling; EEPROM; Flash memory; NROM; negative-bias temperature instability (NBTI); nonvolatile memory (NVM); random telegraph noise (RTN);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2058088
