DocumentCode :
1290681
Title :
Electron Trap Profiling Near 
/Gate Interface in TANOS Stack Using Gate-Side Trap Spectroscopy by Charge Injection and Sensing
Author :
Zahid, M.B. ; Arreghini, A. ; Degraeve, R. ; Govoreanu, B. ; Suhane, A. ; Van Houdt, J.
Author_Institution :
IMEC, Leuven, Belgium
Volume :
31
Issue :
10
fYear :
2010
Firstpage :
1158
Lastpage :
1160
Abstract :
The goal of this letter is to investigate and characterize the defects at the Al2O3/gate interface in TANOS memory stacks. To this purpose, gate-side trap spectroscopy by charge injection and sensing is applied on devices featuring different metal gates and different postdeposition anneals. The results show that a high concentration of defect is present in crystalline samples with a TaN or TiN gate.
Keywords :
alumina; charge injection; electron traps; elemental semiconductors; random-access storage; silicon; silicon compounds; tantalum compounds; titanium compounds; TANOS memory stacks; TaN-Al2O3-Si3N4-SiO2-Si; TiN-Al2O3-Si3N4-SiO2-Si; charge injection; charge sensing; charge-trapping nonvolatile memories; defect concentration; electron trap profiling; gate-side trap spectroscopy; Aluminum oxide; Annealing; Charge measurement; Current measurement; Density measurement; Electron traps; Logic gates; Silicon; Spectroscopy; Tin; Voltage; Voltage measurement; $hbox{Al}_{2}hbox{O}_{3}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2057239
Filename :
5545357
Link To Document :
