DocumentCode :
1290729
Title :
Monolithic 40-GHz Passively Mode-Locked AlGaInAs–InP 1.55- 
m MQW Laser With Surface-Etched Distributed Bragg Reflector
Author :
Hou, Lianping ; Dylewicz, Rafal ; Haji, Moss ; Stolarz, Piotr ; Qiu, Bocang ; Bryce, A. Catrina
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
Volume :
22
Issue :
20
fYear :
2010
Firstpage :
1503
Lastpage :
1505
Abstract :
We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55- lasers integrated with surface-etched distributed Bragg mirrors. Numerically optimized gratings provide low-scattering losses and accurate wavelength control. The lasers produce 4.46-ps Gaussian pulses with time-bandwidth product of 0.47.
Keywords :
Bragg gratings; Gaussian distribution; III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; etching; gallium arsenide; indium compounds; laser mode locking; optical fabrication; optical pulse generation; quantum well lasers; AlGaInAs-InP; Gaussian pulse; MQW laser; distributed Bragg mirrors; distributed Bragg reflector; frequency 40 GHz; gratings; low-scattering losses; passive mode-locking; surface etching; time 4.46 ps; time-bandwidth product; wavelength 1.55 mum; wavelength control; Distributed Bragg reflectors; Dry etching; Gratings; Indium phosphide; Laser mode locking; Masers; Optical surface waves; Quantum well devices; Semiconductor lasers; Surface emitting lasers; AlGaInAs–InP material; mode-locked laser; monolithic integrated circuits; surface-etched distributed Bragg reflector;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2064764
Filename :
5545363
Link To Document :
