Interconnect test for 3D stacked memory-on-logic

Three-dimensional stacked IC (3D-SIC) technology based on Through-Silicon Vias (TSVs) provides numerous advantages as compared to traditional 2D-ICs. A potential application is memory stacked on logic, providing enhanced throughput, and reduced latency and power consumption. However, testing the TSV interconnects between the two dies is challenging, as both the memory and the logic die might come from different manufacturers. Currently, no standard exists and the proposed solutions fail to address dynamic and time-critical faults (at speed testing). In addition, memory vendors have not been in favor to put additional DfT structures such as JTAG for interconnect testing on their memory devices. This paper proposes a new Memory Based Interconnect Test (MBIT) approach for 3D stacked memories. Our test patterns are applied by read and write instructions to the memory and are validated by a case study where a 3D memory is assumed to be stacked on a MIPS64 processor. The main benefits of the MBIT approach are: (1) zero area overhead, (2) the ability to detect both static and dynamic faults and perform at speed testing, (3) flexibility in applying any test pattern, as this can be executed by the CPU on the logic die and (4) extreme short test execution time.