Title :
Design of RF Properties for Vertical Nanowire MOSFETs
Author :
Lind, Erik ; Wernersson, Lars-Erik
Author_Institution :
Dept. of Solid State Phys., Lund Univ., Lund, Sweden
fDate :
7/1/2011 12:00:00 AM
Abstract :
The RF performance of vertical nanowire metal-oxide-semiconductor field-effect transistors in realistic layouts has been calculated. The parasitic capacitances have been evaluated using full 3-D finite-element method calculations, combined with self-consistent Schrödinger-Poisson calculations for the intrinsic gate capacitances. It is shown that a performance comparable to planar FETs can be achieved in the vertical geometry by scaling the nanowire diameter and the wire-to-wire separation.
Keywords :
MOSFET; Poisson equation; Schrodinger equation; capacitance; finite element analysis; microwave field effect transistors; nanowires; 3D finite-element method; RF properties; intrinsic gate capacitance; parasitic capacitance; self-consistent Schrodinger-Poisson calculation; vertical nanowire MOSFET; vertical nanowire metal-oxide-semiconductor field-effect transistors; wire-to-wire separation; Electrodes; FETs; Fabrication; Finite element methods; Geometry; III-V semiconductor materials; MOSFETs; Parasitic capacitance; Radio frequency; Wire; Field-effect transistors; InAs; metal–oxide–semiconductor field-effect transistor (MOSFET); modeling; nanowire; parasitic capacitance;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2010.2064783
