Title :
Status of InP HEMT technology for microwave receiver applications
Author :
Smith, Phillip M.
Author_Institution :
Sanders Associates Inc., Nashua, NH, USA
fDate :
12/1/1996 12:00:00 AM
Abstract :
The current status of InP-based high electron mobility transistor (HEMT) technology for low noise amplification at frequencies up to more than 100 GHz is presented. Following a review of recent advances industry-wide in both device and circuit performance, two issues which will pace the rate at which this new technology can be inserted into microwave systems-material/process maturity and long-term reliability-are discussed
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MIMIC; field effect MMIC; hybrid integrated circuits; indium compounds; integrated circuit design; integrated circuit reliability; microwave receivers; millimetre wave receivers; 18 to 100 GHz; HEMT technology; III-V semiconductors; InP; MMICs; hybrid ICs; long-term reliability; low noise amplification; material/process maturity; microwave receiver applications; Frequency; HEMTs; Indium phosphide; MMICs; Microwave amplifiers; Microwave integrated circuits; Microwave technology; Noise figure; Noise measurement; Performance loss;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
