CMOS dynamic-RAMs approach static RAM speeds

The advantages of CMOS circuitry for dynamic RAM (DRAM) performance are discussed. First, static and dynamic memories are compared. Then, address multiplexing techniques for DRAMs are considered, and it is shown how CMOS circuitry allows effective use of continuously powered-up address buffers (as found in the fastest SRAMs). The overall improvement in DRAM design is illustrated by reference to the IMS2800, a CMOS 256K×1 DRAM.