Title :
Device advantages of DI-LDD/LDD MOSFET over DD MOSFET
Author :
Hanafi, Hussein I.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Different device structures, double-diffused (DD), lightly doped drain (LDD), and double-implanted lightly doped drain (DI-LDD), have been proposed to improve source/drain breakdown voltage and the hot electron-induced degradation in micron/submicron MOSFETs. The author compares these three structures, utilizing the finite-element device analysis program, and presents the device advantages of DI-LDD/LDD MOSFETs over DD MOSFETs.
Keywords :
finite element analysis; insulated gate field effect transistors; MOSFETs; double-diffused; double-implanted lightly doped drain; finite-element device analysis; hot electron-induced degradation; lightly doped drain; source/drain breakdown voltage; Boron; Capacitance; Degradation; Implants; Logic gates; MOSFET circuits; Substrates;
Journal_Title :
Circuits and Devices Magazine, IEEE
DOI :
10.1109/MCD.1985.6311742
