Study and fabrication of PIN photodiode by using ZnSe/PS/Si structure

Author

Chang, Chung C. ; Lee, Ching H.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Ocean Univ., Taipei, Taiwan

Volume

47

Issue

1

fYear

2000

fDate

1/1/2000 12:00:00 AM

Firstpage

50

Lastpage

54

Abstract

In this experiment, the PIN photodiode by using ZnSe/porous Si/Si structure was investigated. The single crystal ZnSe epilayer is successfully grown on porous silicon substrate with CVD system. Indium is as a dopant to reduce the resistivity of ZnSe intrinsic layer. To control the different thickness of n-ZnSe layer will change the photocurrent and responsivity of the ZnSe PIN diode. The best diffusion conditions are diffusion temperature of 300°C and driving time of 30 min. The responsivity of device is 0.03 A/W. In addition, the dark current of the photodiode is near zero

Keywords

II-VI semiconductors; dark conductivity; diffusion; elemental semiconductors; p-i-n photodiodes; porous semiconductors; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; zinc compounds; 30 min; 300 degC; CVD system; PIN photodiode; ZnSe-Si-Si; dark current; diffusion conditions; diffusion temperature; driving time; epilayer growth; intrinsic layer; photocurrent; responsivity; Conductivity; Dark current; Fabrication; Indium; PIN photodiodes; Photoconductivity; Silicon; Temperature; Thickness control; Zinc compounds;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.817566

Filename

817566